SK hynix plans to mass-produce ultra-high-speed DRAM next year, which can be used for AI and super calculation.

According to BusinessKorea, SK hynix announced on August 12 that it has developed HBM2EDRAM, a high-bandwidth memory semiconductor that can be used in artificial intelligence (AI) devices and supercomputers.

The company said its new chip has the fastest speed in the industry. The HBM2E supports more than 460GB of bandwidth per second, based on 3.6Gbps speed performance per pin and 1,024 data I/Os, which is 50% higher than the company's HBM2DRAM developed a year ago.

At the end of December 2013, SK hynix developed the world's first HBM (high bandwidth memory) with four stages of stacked DRAM.

It is understood that SK hynix has developed a 16GB memory package by vertically stacking eight 16Gb chips using "through silicon via" (TSV) technology. SK hynix will start mass production of new chips in 2020. New memory products are used primarily for graphics cards, supercomputers, AIs and servers that require high speed, high performance memory.

SK hynix plans to take the lead in the next-generation memory semiconductor market with HBM2EDRAM. Its second quarter DRAM sales were $4.26 billion, accounting for 28.7% of the global market.

“Since the release of the world's first HBMDRAM in 2013, SK hynix has been dominated by technology competitiveness,” said JeonJun-hyun, who is responsible for the company's HBM business strategy. “We will start mass production of HBM2E next year and will continue to strengthen our presence. Technical advantages in the market."