Hello Guest

Sign In / Register

Welcome,{$name}!

/ Logout
English
EnglishDeutschItaliaFrançais한국의русскийSvenskaNederlandespañolPortuguêspolskiSuomiGaeilgeSlovenskáSlovenijaČeštinaMelayuMagyarországHrvatskaDanskromânescIndonesiaΕλλάδαБългарски езикGalegolietuviųMaoriRepublika e ShqipërisëالعربيةአማርኛAzərbaycanEesti VabariikEuskera‎БеларусьLëtzebuergeschAyitiAfrikaansBosnaíslenskaCambodiaမြန်မာМонголулсМакедонскиmalaɡasʲພາສາລາວKurdîსაქართველოIsiXhosaفارسیisiZuluPilipinoසිංහලTürk diliTiếng ViệtहिंदीТоҷикӣاردوภาษาไทยO'zbekKongeriketবাংলা ভাষারChicheŵaSamoaSesothoCрпскиKiswahiliУкраїнаनेपालीעִבְרִיתپښتوКыргыз тилиҚазақшаCatalàCorsaLatviešuHausaગુજરાતીಕನ್ನಡkannaḍaमराठी
Home > News > SK Hynix announced that the world's first 128-layer 4D NAND will be sold in the second half of the year.

SK Hynix announced that the world's first 128-layer 4D NAND will be sold in the second half of the year.

SK hynix announced on the 26th that it will mass produce the world's first 128-layer 1Tb (Terabit) TLC4DNAND flash memory, and plans to start sales in the second half of the year.

This is SK Hynix's release of 96-layer 4DNAND in October last year, and it will release new products again after 8 months. According to the Korean media "Korean Daily", SK hynix developed a new product for TLC design (3bit per Cell unit), applying vertical etching, multilayer film particle formation, low power loop design and other technologies to create a stack of 3600. More than 100 million NAND granules and 128-layer 1Tb products not only reach the highest stack count in the industry, but also surpass the 90-layer NAND of Samsung Electronics.

Although there are 96 layers of QLC1Tb specifications, the performance and processing speed of TLC are better than QLC. In the NAND market, the market share of TLC products is 85%. Therefore, SK hynix has developed high-capacity NAND for the first time with TLC technology, which has attracted much attention from the outside world.

In particular, although the product adds 32 layers to the original 96-layer NAND product, the process procedure is reduced by 5%, and the 128-layer 4D NAND has a 40-bit higher productivity per wafer than the 96-layer 4D NAND, even if PUC technology is not used ( Peripheral circuits), bit-level productivity of 128-layer 4DNAND can still be increased by more than 15%. According to SK hynix, this method can save the cost of converting the new process, which can be reduced by 60% compared with the previous generation conversion investment cost. "Korean Daily" pointed out that this is SK Hynix's use of the 4DNAND process platform developed in October last year, and optimize the results of the process.

SK hynix plans to start selling 128-layer 4D NAND flash memory in the second half of the year. According to SK hynix, the product can reach 1400Mbps data transmission speed even in low voltage (1.2V) environment, suitable for high performance, low power consumption mobile solutions, and enterprise SSD (Solid State Drive).