FLOSFIA develops GaO MOSFET channel mobility much higher than commercial SiC
According to EE Times Japan, Kyoto University-funded technology startup FLOSFIA demonstrated GaO power devices and evaluation boards at "SEMICON Japan 2019" held from December 11th to 13th, and plans to conduct the first global GaO in 2020 Mass production of Schottky barrier diodes.
Although GaO as a power semiconductor material has poor thermal conductivity, its band gap (about 4.8eV) exceeds that of silicon carbide (about 3.4eV), and the band gap of gallium nitride (about 3.3eV) and silicon (1.1eV) can be improved. Electric vehicles, solar energy and other forms of renewable energy play a key role.
FLOSFIA specializes in fog chemical vapor deposition (CVD) film formation and is committed to developing low-loss power devices. In 2015, a diode was successfully developed that can reduce resistance by 86% compared to silicon carbide. In the 2016 research, the shortcomings that GaO could not manufacture P-type semiconductors were overcome, and the P-type layer was successfully made by using iridium oxide, and a GaO transistor was made. And by making GaO from a gas with a lower density by crystallization, the high cost problem of GaO technology was successfully overcome.
Regarding MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), FLOSFIA claims that the channel mobility of currently-off GaO MOSFETs has far exceeded that of commercial SiC. GaO MOSFETs with the same level or higher performance as SiC will also be cheaper. Samples are planned for 2020 and put into use in 2021.
Although GaO as a power semiconductor material has poor thermal conductivity, its band gap (about 4.8eV) exceeds that of silicon carbide (about 3.4eV), and the band gap of gallium nitride (about 3.3eV) and silicon (1.1eV) can be improved. Electric vehicles, solar energy and other forms of renewable energy play a key role.
FLOSFIA specializes in fog chemical vapor deposition (CVD) film formation and is committed to developing low-loss power devices. In 2015, a diode was successfully developed that can reduce resistance by 86% compared to silicon carbide. In the 2016 research, the shortcomings that GaO could not manufacture P-type semiconductors were overcome, and the P-type layer was successfully made by using iridium oxide, and a GaO transistor was made. And by making GaO from a gas with a lower density by crystallization, the high cost problem of GaO technology was successfully overcome.
Regarding MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), FLOSFIA claims that the channel mobility of currently-off GaO MOSFETs has far exceeded that of commercial SiC. GaO MOSFETs with the same level or higher performance as SiC will also be cheaper. Samples are planned for 2020 and put into use in 2021.